Khaleel I. Hassoon
Abstract
In this work, ultrathin trillium films were evaporated on chemically etchedsilicon substrate. Schottky barrier heights (SBHs) of Te contacting to n-Si weredetermined by analyzing dark ...
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In this work, ultrathin trillium films were evaporated on chemically etchedsilicon substrate. Schottky barrier heights (SBHs) of Te contacting to n-Si weredetermined by analyzing dark current-Voltage (I-V) curves and illuminated shortcircuit current-open circuit voltage (Isc-Voc) curves. To eliminate the effect ofseries resistance we used Norde method to extract effective SBHs. Experimentalresults showed good reasonable agreement of the barrier height values. There ismore than one mechanism to transport the current through the barrier. Thepossibility of using Te-nSi as a photovoltaic device is presented in this work.
